Dataram (DVM24E2T8/16G), 16GB UDIMM ECC UNBUFF, 16 GB, 2 x 8 GB, DDR4, 2400 MHz

288-pin JEDEC-compliant DIMM, 133.35 mm wide by 31.25 mm high
Operating Voltage: VDD/VDDQ = 1.2V (1.14V to 1.26V)
VPP = 2.5V (2.375V to 2.75V)
VDDSPD = 2.25V to 2.75V
I/O Type: 1.2 V signaling
On-board I2C temperature sensor with integrated Serial Presence-Detect (SPD) EEPROM
Data Transfer Rate: 19.2 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 10, 11, 12, 13, 14, 15, 16, 17 and 18
Bi-directional Differential Data Strobe signals
Per DRAM Addressability is supported
Write CRC is supported at all speed grades
DBI (Data Bus Inversion) is supported(x8 only)
CA parity (Command/Address Parity) mode is supported
Supports ECC error correction and detection
16 internal banks
SDRAM Addressing (Row/Col/BG/BA): 16/10/2/2
Fully RoHS Compliant

Specifications